Semiconductor device and method for manufacturing the same

ABSTRACT

The present invention provides a semiconductor device having a coating film of a predetermined thickness provided along the circumference of a semiconductor light emitting element, and provide a method for easily manufacturing the semiconductor device.  
     A semiconductor light emitting element  2  that emits blue light is mounted face down on the top face of a pedestal  1 , and a coating film  3  containing a YAG fluorescent material  6  that emits yellow light is placed so as to cover the top face and side face of the semiconductor light emitting element  2  and the top face of the pedestal  1 . With the semiconductor light emitting element  2  and other elements placed between a first film  8  and a second film  9 , the films are laminated in vacuum, thereby to fasten the coating film  3  onto the semiconductor light emitting element  2 . Then the first film  8  and the second film  9  are removed, the coating film  3  is trimmed and the pedestal  1  is diced, thereby to obtain the semiconductor device  100  having the coating film  3  of a predetermined thickness provided along the circumference of the semiconductor light emitting element  2.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device comprising asemiconductor element covered with a coating film and a method formanufacturing the same, and particularly to a semiconductor devicecomprising a semiconductor light emitting element that is covered and amethod for manufacturing the same.

2. Description of the Related Art

Methods of forming a coating film on a semiconductor element in theprior art include those that employ potting means or screen printingmeans. FIG. 14 is a sectional view schematically showing a process of aconventional film forming method that employs the potting means. FIG. 15is a sectional view schematically showing a process of a conventionalfilm forming method that employs the screen printing means. Theprocesses will be described below with reference to these drawings.

A semiconductor device 200 is made by using the potting means. Thesemiconductor device 200 comprises a semiconductor element 210 mountedface down in a cavity 211 of a predetermined shape. Top face and sideface of the semiconductor element 210 are covered with a coating film212. The semiconductor element 210 is electrically connected with a leadelectrode 215 that is formed integrally with the cavity 211. Thesemiconductor device 200 has the semiconductor element 210 that ismounted face down on the lead electrode 215 in advance. A resin 213 isdropped from a thin tube 214 onto the top face of the semiconductorelement 210. Resin supply is stopped when the resin has completelycovered the top face and side face of the semiconductor element 210, soas to harden the resin 214. Thus the coating film 212 is formed on thetop face and side face of the semiconductor element 210.

A semiconductor device 300 is made by using the screen printing means.The semiconductor device 300 comprises a semiconductor element 310mounted face down on the top surface of a substrate 311. Top face andside face of the semiconductor element 310 are covered with a coatingfilm 312. The semiconductor element 310 is electrically connected with alead electrode 315 that is formed on the substrate 311. Thesemiconductor device 300 is made by providing a side wall 316 thatserves as a mask having a predetermined shape, spreading a resin 313with a squeegee 314, thereby forming the coating film 312 on the topface of the semiconductor element 310. After forming the coating film312, the side wall 316 serving as a mask is removed, thus having thecoating film 312 formed on the top face and side face of thesemiconductor element 310.

However, the semiconductor device 200 made by using the conventionalpotting means and the semiconductor device 500 made by using theconventional screen printing means have problems as described below.

In the semiconductor device 200 made by using the conventional pottingmeans, the coating film 212 that covers the top face and side face ofthe semiconductor element 210 cannot be formed with uniform thickness.For example, when a semiconductor light emitting element is used as thesemiconductor element 210 and a fluorescent material is mixed in thecoating film 212, difference in thickness of the film among productsresults in variability in color between products as light emitted by thesemiconductor light emitting element is absorbed by the fluorescentmaterial and light of different wavelength generated by the fluorescentmaterial is emitted to the outside. In addition, since the coating filmis thicker in the portion where resin 213 has been dropped from the thintube 214 and thinner in the surrounding portion, larger amount of lightemitted by the fluorescent material 6 emerges from the potted portion,while smaller amount of light emitted by the fluorescent material 6emerges from the surrounding portion, thus resulting in colorunevenness.

In the semiconductor device 300 made by using the conventional screenprinting means, it is difficult to form the coating film 312 that coversthe top face and the side face of the semiconductor element 310 withuniform thickness. It is also difficult to manufacture, as the coatingfilm 312 may come off along with the side wall 316 that makes the maskwhen the side wall 316 is removed from the coating film 312.

SUMMARY OF THE INVENTION

With the background described above, it is an object of the presentinvention to provide a semiconductor device that has a coating film of apredetermined thickness provided on the periphery of a semiconductorelement. It is also an object of the present invention to provide amethod of easily manufacturing the semiconductor device.

In order to solve the problems described above, the inventors of thepresent application conducted a research and completed the presentinvention.

The present invention has such a constitution so as to achieve effectsas described below. In the description that follows, effects of thepresent invention will be described by replacing the semiconductorelement with a semiconductor light emitting element, but the presentinvention is not limited to this constitution.

The semiconductor device of the present invention comprises asemiconductor element, a pedestal on which the semiconductor element isplaced, and a coating film that covers at least a part of the top faceand side face of the semiconductor element and the top face of thepedestal, wherein at least two of first thickness of the coating film ina portion thereof that covers the top face of the semiconductor element,second thickness of the coating film in a portion thereof that coversthe side face of the semiconductor element and third thickness of thecoating film in a portion thereof the covers the top face of thepedestal are substantially equal to each other, and the external surfaceof the coating film that covers the edge between the top face and theside face of the semiconductor element has a rounded shape, and theexternal surface of the coating film that covers the boundary betweenthe side face of the semiconductor element and the top face of thepedestal has a rounded shape.

According to the semiconductor device of the present invention havingthe constitution described above, the semiconductor device having thecoating film of a predetermined thickness can be provided. It alsoenables it to protect the semiconductor device from external disturbancesuch as moisture and dust. In addition, in case a fluorescent materialthat absorbs light emitted by the semiconductor light emitting elementand transforms the wavelength thereof is mixed in the coating film, forexample, such a semiconductor device can be provided that emits light ofa predetermined color with less color unevenness through blending oflight emitted by the semiconductor light emitting element and lightemitted by the fluorescent material.

In the semiconductor device of the present invention, radius ofcurvature of the external surface of the rounded coating film thatcovers the edge is preferably not smaller than (½)N and not larger than3M, where M is larger one of the first thickness and the secondthickness and N is the smaller one thereof. This makes it possible tocompletely cover the edge that is the intersect between the top face andthe side face of the semiconductor element, and also to provide a flatportion on the top face of the semiconductor element. As a result, incase a coating film having a fluorescent material mixed therein and thesemiconductor light emitting element are used, such a semiconductordevice can be provided that emits light with less color unevenness. Incase the first thickness and the second thickness are equal, M and N areequal to each other.

In the semiconductor device of the present invention, it is preferablethat radius of curvature of the external surface of the rounded coatingfilm that covers the boundary is not smaller than (½)T and not largerthan 3S, where S is larger one of the second thickness and the thirdthickness and T is the smaller one thereof. In case the second thicknessand the third thickness are equal, S and T are equal to each other.

According to the present invention, it is preferable that the differencebetween the maximum value and the minimum value of thickness of thecoating film that covers the top face of the semiconductor element iswithin {fraction (1/10)} of the arithmetic mean of the thicknesses ofthe coating film that covers the top face of the semiconductor element,and the first thickness is the arithmetic mean. By forming such acoating film having uniform thickness, a semiconductor device that emitslight with less color unevenness can be provided when the coating filmhaving a fluorescent material mixed therein and the semiconductor lightemitting element are used.

Also according to the present invention, it is preferable that thedifference between the maximum value and the minimum value of thicknessof the coating film that covers the side face of the semiconductorelement is within {fraction (1/10)} of the arithmetic mean of thethicknesses of the coating film that covers the side face of thesemiconductor element, and the second thickness is the arithmetic mean.

By forming such a coating film having uniform thickness, a semiconductordevice that emits light with less color unevenness can be provided whenthe coating film having the fluorescent material mixed therein and thesemiconductor light emitting element are used. Particularly by formingthe coating film having uniform thickness on the top face and the sideface of the semiconductor light emitting element, directivity of lightemitted from the top face and the side face of the semiconductor lightemitting element can be improved.

According to the present invention, it is preferable that the differencebetween the maximum value and the minimum value of thickness of thecoating film that covers the top face of the pedestal is within{fraction (1/10)} of the arithmetic mean of the thicknesses of thecoating film that covers the top face of the pedestal, while the thirdthickness is the arithmetic mean. This constitution makes it possible toefficiently extract light from the semiconductor light emitting element,since light emitted from the side face of the semiconductor lightemitting element toward the pedestal is also absorbed by the fluorescentmaterial mixed in the coating film.

The contact area between the pedestal and the coating film is preferablylarger than the cross sectional area of the coating film at the middleof the side face of the semiconductor element. This makes it possible toincrease the bonding strength between the pedestal and the coating film.

The semiconductor light emitting element may also be used as thesemiconductor element. This constitution makes it possible to improvethe efficiency of extracting light from the semiconductor light emittingelement, since the difference in refractive index between thesemiconductor light emitting element and the coating film is smallerthan the difference in refractive index between the semiconductor lightemitting element and air.

The coating film preferably contains a fluorescent material, a pigmentor a dispersant mixed therein. For example, by mixing a fluorescentmaterial or a pigment in the coating film, such a semiconductor devicecan be provided that emits light of a predetermined color throughtransformation of wavelength of light emitted by the semiconductor lightemitting element. When a dispersant is mixed in the coating film, forexample, a semiconductor device having improved effect of diffusinglight can be provided. The amount of the fluorescent material mixed inthe coating film can be substantially controlled by adjusting the filmthickness, so that color tone of light emitted by the semiconductordevice can be easily controlled.

The coating film may consist of two or more films. By covering with twoor more films, light emitting devices of various colors can be provided.In view of the efficiency of transforming the wavelength, it ispreferable to place a coating film that contains a fluorescent materialwhich emits light of longer wavelength at a position near thesemiconductor element and place a coating film that contains afluorescent material which emits light of shorter wavelength at aposition far from the semiconductor element. For example, such aconstitution may be employed as the top face of the semiconductorelement is covered with a coating film that contains a siliconnitride-based fluorescent material that emits red light and the coatingfilm that contains the silicon nitride-based fluorescent material iscovered with a YAG-based fluorescent material that emits yellow-green toyellow light. This constitution enables it to provide a light emittingdevice that emits light of incandescent lamp having high color renderingperformance. Such a constitution may also be employed as a semiconductorelement that emits ultraviolet ray is used, while the top face of thesemiconductor element is covered with a coating film that contains analkaline rare earth element halogen apatite-based fluorescent materialthat emits blue light and the coating film that contains the alkalinerare earth element halogen apatite-based fluorescent material is coveredwith a YAG-based fluorescent material that emits yellow-green to yellowlight. This constitution enables it to provide a light emitting devicethat emits white light.

The external surface of the coating film-provided on the top face of thesemiconductor element may have protrusions and recesses. The protrusionsof the coating film are caused mainly by a fluorescent material, apigment or a dispersant. Providing the protrusions or recesses on theexternal surface of the coating film enables it to improve theefficiency of extracting light.

The interface between the top face of the semiconductor element and thecoating film is preferably smooth. This enables it to increase thebonding strength between the semiconductor element and the coating film.In case there are protrusions or recesses in the interface between thetop face of the semiconductor element and the coating film, inparticular, light emitted by the semiconductor light emitting elementmay be reflected on the interface resulting in a decrease in theefficiency of extracting light.

The coating film is preferably a soft film. This relaxes stress therebypreventing the semiconductor element from being broken, even when thecoating film undergoes thermal expansion due to the heat generated asthe semiconductor element operates.

The coating film is preferably made of a silicone resin compositionbecause of high permeability to light and high heat resistance thereof.

The coating film may also have adhesiveness, since it provides strongerbonding between the coating film and the semiconductor element andbetween the coating film and the pedestal without using an adhesiveagent or the like.

The semiconductor element may be provided with a coating member thatcovers at least a part of the external surface of the coating film, inorder to protect the semiconductor element and the coating film.

The coating member may be permeable to light. Use of a translucentcoating member enables it to improve the efficiency of extracting lightemitted by the semiconductor light emitting element. Particularly byusing the semiconductor light emitting element, the coating film and thecoating member made of materials having refractive indices decreasing inthis order, it is made possible to improve the efficiency of extractinglight emitted by the semiconductor light emitting element.

The coating member is preferably made in semi-spherical shape or lensshape which makes it possible to control the directivity of light.

The coating member may include a fluorescent material, a pigment or adispersant mixed therein. For example, by mixing a fluorescent materialor a pigment in the coating member, such a semiconductor device can beprovided that emits light of a predetermined color throughtransformation of wavelength of light emitted by the semiconductor lightemitting element. When a dispersant is mixed in the coating member, forexample, a semiconductor device having improved effect of diffusinglight can be provided.

The coating member is preferably made of silicone resin composition orepoxy resin composition, since it is high in light permeability and inheat resistance.

The first manufacturing method according to the present invention is amethod for manufacturing the semiconductor device that includes apedestal and a semiconductor element placed on the pedestal, with atleast a part of the top face and the side face of the semiconductorelement and the top face of the pedestal being covered by a coatingfilm, said method comprising a first process of successively placing atleast the pedestal, the semiconductor element and the coating film oneon another, a second process of putting the pedestal, the semiconductorelement and the coating film that have been placed one on another in thefirst process into a bag, and a third process of reducing a pressurewithin the bag so that the coating film is fastened onto at least a partof the top face and the side face of the semiconductor element and thetop face of the pedestal.

This constitution provides a method for easily manufacturing thesemiconductor device wherein at least a part of the semiconductorelement is covered. It is also made possible to provide a semiconductordevice having the coating film of a predetermined thickness. Also asemiconductor device having less variability in color among products canbe provided since the substantially uniform coating film can be providedon the top face and the side face of the semiconductor light emittingelement, when the coating film having a fluorescent material mixedtherein and the semiconductor light emitting element are used.

A second manufacturing method according to the present invention is amethod for manufacturing a semiconductor device that includes a pedestaland a semiconductor element placed on the pedestal, with at least a partof the top face and side face of the semiconductor element and the topface of the pedestal being covered by a coating film, said methodcomprising a first process of successively placing at least thepedestal, the semiconductor element and the coating film one on anotherbetween a first film and a second film that are used in laminationprocess, a second process of laminating the first film and the secondfilm on at least part thereof and bonded together in vacuum, and a thirdprocess of reducing a pressure within the space between the first filmand the second film in vacuum so that the coating film is fastened ontoat least a part of the top face and the side face of the semiconductorelement and the top face of the pedestal.

This constitution enables it to form the coating film at a predeterminedposition of the semiconductor element without positional deviationbetween the semiconductor element and the coating film. Also a methodcan be provided for easily manufacturing the semiconductor devicewherein at least a part of the semiconductor element is covered. It isalso made possible to provide a semiconductor device having the coatingfilm of a predetermined thickness. Also a semiconductor device havingless variability in color among products can be provided since thesubstantially uniform coating film can be provided on the top face andthe side face of the semiconductor light emitting element, when thecoating film having a fluorescent material mixed therein and thesemiconductor light emitting element are used.

In the first process, it is preferable to provide a back plate on asurface of the pedestal opposite to the surface thereof on which thesemiconductor element is placed. Providing the back plate on thepedestal makes it possible to prevent the pedestal from warping andbraking when the pressure in the bag is reduced, thereby improving theefficiency of production.

In the first process, it is preferable to mix a fluorescent material, apigment or a dispersant in the coating film. For example, by using asemiconductor light emitting element and mixing a fluorescent materialor a pigment in the coating film, such a semiconductor device can beprovided that emits light of a predetermined color. This eliminates theneed for providing a fluorescent material layer separately. When adispersant is mixed in the coating film, for example, such asemiconductor device can be provided that emits light of a predeterminedcolor through the transformation of the wavelength of light emitted bythe semiconductor light emitting element. For example, a semiconductordevice having improved effect of diffusing light can be provided bymixing a dispersant in the coating film.

In the first process, it is preferable that the coating film is made byusing a silicone resin composition, since it is high in lightpermeability and allows for high productivity.

In the first process, the coating film may have adhesiveness, since itprovides stronger bonding between the coating film and the semiconductorelement and between the coating film and the pedestal without using anadhesive agent or the like.

In the first process, the coating film consists of one or more film.This constitution enables it to provide light emitting devices that emitlight of various colors.

In the third process, a pressure may be applied to the bag from theoutside. This further improves the bonding strength between thesemiconductor element and the coating film.

In the third process, it is preferable to apply a pressure to the bagfrom the outside, and to use isotropic pressure pressing means as themeans for applying the pressure. Use of the isotropic pressure pressingmeans enables it to form the coating film uniformly since there is nopossibility of localized pressure being applied to a part of the coatingfilm. It also becomes possible to prevent positional deviation fromoccurring between the semiconductor element and the coating film.

It is preferable to heat the inside of the bag in the third process orafter the third process. This further improves the bonding strengthbetween the semiconductor element and the coating film.

In the third process, a pressure may be applied to the first film andthe second film from the outside. This further improves the bondingstrength between the semiconductor element and the coating film.

In the third process, it is preferable that a pressure is applied to thefirst film and the second film from the outside, and the means ofapplying the pressure is isotropic pressure pressing means. Use of theisotropic pressure pressing means enables it to form the coating filmuniformly since there is no possibility of localized pressure beingapplied to a part of the coating film. It also becomes possible toprevent positional deviation from occurring between the semiconductorelement and the coating film.

It is preferable to heat the space between the first film and the secondfilm in the third process or after the third process. This furtherimproves the bonding strength between the semiconductor element and thecoating film.

In the second manufacturing method according to the present invention,it is preferable that, after the third process, to include a process ofremoving the first film, a process of covering the top face of thesemiconductor element that is covered by the coating film with a coatingfilm of the same or different kind, between the third film and thesecond film or a fourth film which are used in lamination process, aprocess of laminating the third film and the second film or the fourthfilm are laminated on at least part thereof and bonded together invacuum, and a process of reducing the pressure in the space between thethird film and the second film or the fourth film in vacuum so that thetop face of the semiconductor element that is covered by the coatingfilm is bonded with a coating film of the same or different kind,thereby forming a coating film consisting of two or more films on atleast portion of the top and side faces of the semiconductor element andthe top face of the pedestal. This constitution enables it to providelight emitting devices that emit light of various colors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic plan view showing the semiconductor deviceaccording to the first embodiment of the invention.

FIG. 1B is a schematic sectional view taken along lines A-A′ in FIG. 1A.

FIG. 2A is a schematic perspective view showing the coating film of thefirst embodiment.

FIG. 2B is a schematic sectional view showing a part of section takenalong lines B-B′ in FIG. 2A.

FIG. 2C is a schematic sectional view of the semiconductor device of thefirst embodiment.

FIG. 3A is a schematic perspective view showing the coating filmaccording to the second embodiment of the present invention.

FIG. 3B is a schematic sectional view taken along lines C-C′ in FIG. 3A.

FIG. 3C is a schematic sectional view showing the semiconductor deviceaccording to the second embodiment.

FIG. 4A is a schematic perspective view showing the coating filmaccording to the third embodiment.

FIG. 4B is a schematic sectional view of the coating film taken alonglines D-D′ in FIG. 4A.

FIG. 4C is a schematic sectional view showing the semiconductor deviceaccording to the third embodiment of the present invention.

FIG. 5A is a schematic perspective view showing the coating filmaccording to the fourth embodiment of the present invention.

FIG. 5B is a schematic sectional view of the coating film taken alonglines E-E′ in FIG. 5A.

FIG. 5C is a schematic sectional view showing the semiconductor deviceaccording to the fourth embodiment of the present invention.

FIG. 6A is a schematic perspective view showing the coating film usedaccording to the fifth embodiment of the present invention.

FIG. 6B is a schematic sectional view of the coating film taken alonglines F-F′ in FIG. 6A.

FIG. 6C is a schematic sectional view showing the semiconductor deviceaccording to the fifth embodiment of the present invention.

FIG. 7A is a schematic perspective view showing the coating filmaccording to the sixth embodiment of the present invention.

FIG. 7B is a schematic sectional view of the coating film in a sectiontaken along lines G-G in FIG. 7A.

FIG. 7C is a schematic sectional view showing the semiconductor deviceaccording to the sixth embodiment of the present invention.

FIG. 8A is a schematic perspective view showing the coating filmaccording to the seventh embodiment of the present invention.

FIG. 8B is a schematic sectional view showing the coating film in asection taken along lines H-H in FIG. 8A.

FIG. 8C is a schematic sectional view showing the semiconductor deviceaccording to the seventh embodiment of the present invention.

FIG. 9 is a schematic plan view showing the semiconductor light emittingelement disposed on the top face of the pedestal that is not yet cut,before the coating film is formed in the manufacturing method of thefirst embodiment.

FIG. 10 is a schematic plan view showing the pedestals having thesemiconductor light emitting element disposed on the top faces thereofbeing disposed, before the coating film is formed in a variation of themanufacturing method according to the present invention.

FIG. 11A is a sectional view schematically showing the process offorming the coating film on the pedestals having the semiconductor lightemitting element disposed thereon between the first and second films inthe method of manufacturing the semiconductor device according to thefirst embodiment of the present invention.

FIG. 11B is a sectional view schematically showing the process afterlaminating the first and second films in the method of manufacturing thesemiconductor device according to the first embodiment.

FIG. 11C is a sectional view schematically showing the process oftrimming the first and second films in the method of manufacturing thesemiconductor device according to the first embodiment.

FIG. 11D is a sectional view schematically showing the process ofremoving the first and second films in the method of manufacturing thesemiconductor device according to the first embodiment.

FIG. 11E is a sectional view schematically showing the process oftrimming the coating film in the method of manufacturing thesemiconductor device according to the first embodiment.

FIG. 11F is a sectional view schematically showing the process of dicingthe pedestal in the method of manufacturing the semiconductor deviceaccording to the first embodiment.

FIG. 11G is a sectional view schematically showing the semiconductordevice after separation in the method of manufacturing the semiconductordevice according to the first embodiment.

FIG. 12A is a schematic plan view showing the semiconductor deviceaccording to the present invention.

FIG. 12B is a schematic sectional view of the semiconductor device ofthe present invention in a section taken along lines I-I.

FIG. 13 is a schematic sectional view of the semiconductor devicepackaged in the semiconductor light emitting element according to thepresent invention.

FIG. 14 is a sectional view schematically showing the prior art methodof forming the coating film using potting means.

FIG. 15 is a sectional view schematically showing the prior art methodof forming the coating film using screen printing means.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now the semiconductor device and the method for manufacturing the sameaccording to the present invention will be described below by way ofembodiments and examples. It is understood, however, that the presentinvention is not limited by these embodiments and examples.

Embodiment 1

FIG. 1A is a schematic plan view showing the semiconductor deviceaccording to a first embodiment of the invention. FIG. 1B is a schematicsectional view taken along lines A-A′ in FIG. 1A showing thesemiconductor device according to the first embodiment. FIG. 2A is aschematic perspective view showing a coating film used in manufacturingthe semiconductor device of the first embodiment. FIG. 2B is a part ofschematic sectional view taken along lines B-B′ in FIG. 2A showing thesectional structure of the coating film. FIG. 2C is a schematicsectional view of the semiconductor device of the first embodiment.

Semiconductor Device

A semiconductor device 100 of the first embodiment comprises asemiconductor light emitting element 2 placed on the top face of apedestal 1, while a coating film 3 covers at least a part of the topface and the side face of the semiconductor light emitting element 2 andthe top face of the pedestal 1. The pedestal 1 has electrode 4 formedthereon having a predetermined electrical conductivity pattern opposingthe electrode pattern of the semiconductor light emitting element 2. Thesemiconductor light emitting element 2 is mounted face down on the topface of the pedestal 1. The semiconductor light emitting element 2 haspositive and negative electrodes (not shown) that are electricallyconnected via a joint member 5 to the electrode 4 of the pedestal 1.Connection is made, for example, by forming solder bumps on the side ofthe electrode 4 and applying ultrasonic vibration while thesemiconductor light emitting element 2 is placed on the solder bumps,thereby bonding the electrodes. Part of the electrode 4 is electricallyconnected with the electrode of the semiconductor light emitting element2, and the other part thereof is electrically connected with externalelectrode (not shown) via a wire or the like to establish electricalcontinuity. An insulating under fill is inserted for the prevention ofshort-circuiting in a portion of the gap other than the joint member 5between the electrode of the semiconductor light emitting element 2 andthe electrode 4 of the pedestal 1. The coating film 3 contains afluorescent material 6 that transforms the wavelength of light emittedby the semiconductor light emitting element 2 and emits light ofwavelength different from that of light emitted by the semiconductorlight emitting element 2.

The coating film 3 has a thickness of a portion thereof covering the topface of the semiconductor light emitting element 2 (first thickness), athickness of a portion thereof covering the side face of thesemiconductor light emitting element 2 (second thickness) and athickness of a portion thereof covering the top face of the pedestal(third thickness), that are substantially equal to each other. Theexternal surface of the coating film 3 located on the edge that is theintersect between the top face and the side face of the semiconductorlight emitting element 2 has a rounded shape. The external surface ofthe coating film 3 located on the boundary (edge) between side face ofthe semiconductor light emitting element 2 and the top face of thepedestal 1 has a rounded shape. In this specification, the firstthickness, the second thickness and the third thickness are the meanthickness of the respective portions.

The external surface of the coating film 3 that covers the semiconductorlight emitting element 2 has protrusions and recesses due to theinclusion of the fluorescent material 6, while the protrusions and therecesses have gently sloped surfaces. Since the protrusions and therecesses increase the surface area of the external surface of thecoating film 3, the efficiency of extracting light can be improved. Theprotrusions and recesses of the coating film 3 are caused because thesilicone resin shrinks in volume while in contact with the semiconductorlight emitting element 2, so that portions containing the fluorescentmaterial 6 remain slightly protruded. The interface between thesemiconductor light emitting element 2 and the coating film 3 is smooth.This enables it to increase the bonding strength between the coatingfilm 3 and the semiconductor light emitting element 2, and improve theefficiency of extracting light through the coating film 3 and thesemiconductor light emitting element 2.

Semiconductor Element

The semiconductor element may be used for, in addition to thesemiconductor light emitting element that emits light, transistor andintegrated circuit or large-scale integrated circuit such as IC, LSI,VLSI or ULSI. While a case of semiconductor light emitting element 2 isdescribed in this specification as typical example, the presentinvention is not limited to this case.

Semiconductor Light Emitting Element

The semiconductor light emitting element 2 has such a constitution as ann-type semiconductor layer (not shown) and a p-type semiconductor layer(not shown) made mainly of nitride gallium are formed on a transparentmember (not shown) such as sapphire substrate or silicon substrate, andis electrically connected via an n-type electrode (not shown) and ap-type electrode (not shown) to the electrode 4 provided on the pedestal1. An insulating protective film (not shown) made of silicon oxide,polyimide or a composite film thereof is formed to cover thesemiconductor layer except for the region of the pad electrode. The padelectrode and the electrode 4 provided on the pedestal are connectedwith each other by the joint member 5. An insulating under fill isinserted in a portion other than the joint member 5 between the padelectrode and the electrode 4 provided on the pedestal 1 for the purposeof purging air and preventing short-circuiting between the p-typeelectrode and the n-type electrode. The joint member 5 may be solder orgold bump bonded by ultrasonic excitation between the electricallyconductive pattern and the pad electrode, an electrically conductivepaste such as gold, silver, palladium or rhodium, or an anisotropicallyconductive paste.

The semiconductor light emitting element 2 is preferably of flip-chiptype.

The semiconductor light emitting element 2 may be, in addition to onethat emits light in the visible region of wavelengths from 380 nm or 400nm to 780 nm, one that emits ultraviolet ray of wavelengths from 350 nmor 380 nm to 400 nm.

The semiconductor light emitting element 2 is not limited to one thatemits light of three primary colors; blue, green and red, but may alsobe to one that emits light of such colors as blue-purple, blue-green,yellow-green, yellow and orange. When the fluorescent material 6 ismixed in the coating film 3, it is preferable to use the semiconductorlight emitting element 2 that emits light of wavelength that can excitethe fluorescent material 6.

There is no restriction on the dimensions of the semiconductor lightemitting element 2, which may be 1 mm square, 0.5 mm square, 2 mm squareor measure 2 mm by 1 mm.

Pedestal

The pedestal-1 has the electrode 4 formed thereon having a pair ofpredetermined electrically conductive patterns of positive and negativepolarities. The electrically conductive patterns of the electrode 4 havea portion that is electrically connected to the semiconductor lightemitting element 2 and a portion that is electrically connected to anexternal electrode, both portions being connected with each other. It ispreferable that only these portions are exposed on the surface of thepedestal 1, but portions of the electrically conductive pattern otherthan these portions may also be exposed. The portion of the electricallyconductive patterns that is electrically connected to the semiconductorlight emitting element 2 has such a shape as correspond to the p-typeelectrode and the n-type electrode of the semiconductor light emittingelement 2. The portion electrically connected to the external electrodeis connected by wire bonding using a wire. Thus the semiconductor lightemitting element 2 is electrically connected to the external electrodevia the electrically conductive pattern and the electrode 4.

The pedestal 1 may be a glass epoxy substrate, a liquid crystal polymersubstrate, polyimide resin substrate, a ceramic substrate or the like.

The electrically conductive pattern may be made of a good electricalconductor such as copper, phosphor bronze, iron or nickel. Theelectrically conductive pattern may also be plated on the surfacethereof with a noble metal such as silver, gold, palladium or rhodium.

Coating Film

The coating film 3 covers the top face and the side face of thesemiconductor light emitting element 2 and the top face of the pedestal1. The coating film 3 may also cover only the top face and the side faceof the semiconductor light emitting element 2.

The coating film 3 has such a configuration as a portion thereof thatcovers the top face of the semiconductor light emitting element 2, aportion thereof that covers the side face of the semiconductor lightemitting element 2 and a portion thereof that covers the top face of thepedestal 1 are substantially equal to each other in thickness. Theexternal surface of the coating film 3 located on the edge that is theintersect between the top face and the side face of the semiconductorlight emitting element 2 has a rounded shape. The external surface ofthe coating film 3 located on the edge that is the boundary (intersect)between the side face of the semiconductor light emitting element 2 andthe top face of the pedestal 1 has a rounded shape. The rounded shape ofthe coating film 3 is formed when the thin sheet (coating film) isfastened onto the surface of the semiconductor light emitting element 2during the manufacturing process.

In the semiconductor device, thickness of the coating film 3 ispreferably in the following ranges: (1) the difference between themaximum value and the minimum value of thickness of the coating film ina portion thereof that covers the top face of the semiconductor lightemitting element 2 is within {fraction (1/10)} of the arithmetic mean ofthe thicknesses (first thickness) of the coating film; (2) thedifference between the maximum value and the minimum value of thicknessof the coating film in the portion that covers the side face of saidsemiconductor light emitting element 2 is within {fraction (1/10)} ofthe arithmetic mean of the thicknesses (second thickness) of the coatingfilm; (3) the difference between the maximum value and the minimum valueof thickness of the coating film in a portion that covers the top faceof said pedestal 3 is within {fraction (1/10)} of the arithmetic mean ofthe thicknesses (third thickness) of the coating film; and (4) at leasttwo of the first thickness that is represented by the arithmetic mean ofthe thicknesses of coating film in a portion thereof covering the topface of the semiconductor light emitting element 2, the second thicknessthat is represented by the arithmetic mean of the thicknesses of thecoating film in a portion thereof covering the side face of thesemiconductor light emitting element 2 and the third thickness that isrepresented by the arithmetic mean of the thicknesses of the coatingfilm in a portion thereof covering the top face of the pedestal 1 aresubstantially equal to each other. The phrase that two thicknesses aresubstantially equal means that, for example, the difference between thefirst thickness and the second thickness is within ⅕ of any one of thefirst thicknesses and the second thickness. The external surface of thecoating film 3 located on the edge that is the intersect between the topface and the side face of the semiconductor light emitting element 2 hasa rounded shape, and the rounded shape is an arc having a radius ofcurvature of the external surface in a range from (½)N to 3M, where M isthe larger one of first distance and second distance, and N is thesmaller distance. The external surface of the coating film 3 located onthe edge that is the intersect between the side face of thesemiconductor light emitting element 2 and the top face of the pedestal1 has a rounded shape, and the rounded shape is an arc having radius ofcurvature of the external surface in a range from (½)T to 3S, where S isthe larger one of second distance and third distance, and T is thesmaller distance.

While it is preferable to form the coating film 3 from silicone resincomposition or denatured silicone resin composition, insulating resincompositions that are permeable to light may be used such as epoxy resincomposition, denatured epoxy resin composition or acrylic resincomposition.

The coating film 3 contains the fluorescent material 6 mixed therein.The fluorescent material 6 is preferably mixed in substantially uniformproportion in the coating film 3. But the fluorescent material 6 mayalso be mixed substantially uniformly in higher proportion on the sideof one surface of the coating film 3. By placing the surface where thefluorescent material 6 is mixed in lower proportion on the side of thesemiconductor light emitting element 2, deterioration of the fluorescentmaterial 6 can be suppressed since it becomes difficult for the heatgenerated by the semiconductor light emitting element 2 to transmittoward the fluorescent material 6.

The coating film 3 may also include a pigment or a dispersant mixedtherein, since it enables it to form the coating film 3 appropriate forthe application.

The coating film 3 is preferably a soft film, so as to fit closely onthe top face and the side face of the semiconductor light emittingelement 2 and the top face of the pedestal 1, thus conforming to theconfiguration of the semiconductor light emitting element 2.

The coating film 3 preferably has adhesiveness. Making the costing film3 adhesive enables it to increase the bonding strength between thesemiconductor light emitting element 2 and the coating film 3.Adhesiveness may be demonstrated not only at the normal temperature butalso through application of heat and pressure to the coating film 3.

Thickness of the coating film 3 is preferably roughly in a range from 10to 150 μm, and more preferably in a range from 25 to 100 μm for the easeof operation. However, there is no restriction on the thickness, andvarious thicknesses from very thin film to thick film can be used.

The coating film 3 may shrink in volume as alcohol and/or othercomponent of the coating film 3 evaporates when temperature or pressureis applied for drying. This causes protrusions and recesses to appear onthe external surface of the coating film 3. Some of the protrusions onthe external surface of the coating film 3 are caused by the particlesof the fluorescent material 6. As the protrusions are formed on theexternal surface of the coating film 3, light emitted by thesemiconductor light emitting element 2 can be extracted efficiently tothe outside.

Fluorescent Material

The fluorescent material 6 absorbs light emitted by the semiconductorlight emitting element 2, and emits light of wavelength different fromthat of the semiconductor light emitting element 2. Thus thesemiconductor device 100 that produces light emitted by the fluorescentmaterial 6 can be provided. For example, the semiconductor lightemitting element 2 that emits ultraviolet ray having peak wavelengtharound 360 nm is used to excite oxynitride-based fluorescent material 6activated with europium. The oxynitride-based fluorescent material 6emits green light. Thus the semiconductor device 100 that produces lightemitted by the fluorescent material 6 can be provided.

Light emitted by the semiconductor light emitting element 2 and lightemitted by the fluorescent material 6 may also be blended so as toprovide the semiconductor device 100 that emits light of a predeterminedcolor. For example, the semiconductor light emitting element 2 thatemits blue light having peak wavelength around 460 nm is used to exciterare earth aluminate fluorescent material 6 activated with cerium. Therare earth aluminate fluorescent material 6 emits yellow light. Thussemiconductor device that emits white light can be provided by blendingthe blue light emitted by the semiconductor light emitting element 2 andthe yellow light emitted by the rare earth aluminate fluorescentmaterial 6.

The fluorescent material 6 is preferably at least one selected fromamong alkaline earth halogen apatite fluorescent materials, alkalineearth halogen apatite fluorescent materials, alkaline earth metal boricacid halogen fluorescent materials, alkaline earth metal aluminatefluorescent materials, alkaline earth silicates, alkaline earthsulfides, alkaline earth thiogallates, alkaline earth silicon nitrides,germanates, nitrates and oxynitraides, that are mainly activated withelements based on lanthanoid such as Eu or elements based on transitionmetals such as Mn; rare earth aluminates that are mainly activated withelements based on lanthanoid such as Ce; and organic complexs that aremainly activated with elements based on lanthanoid such as Eu. Specificexamples of the fluorescent material include, but are not limited, tothe following fluorescent materials.

Examples of the alkaline earth halogen apatite fluorescent material,that is mainly activated with elements based on lanthanoid such as Eu orelements based on transition metals such as Mn, include M₅ (PO₄)₃X: R (Mis at least one element selected from among Sr, Ca, Ba, Mg and Zn, X isat least one element selected from among F, Cl, Br and I, and R is Euand/or Mn).

Examples of the alkaline earth metal aluminate fluorescent materialinclude SrAl₂O₄: R, Sr₄Al₁₄O₂₅: R, CaAl₂O₄: R, BaMg₂Al₁₆O₂₇: R,BaMg₂Al₁₆O₁₂: R and BaMgAl₁₀O₁₇: R(R is Eu and/or Mn).

Examples of the alkaline earth sulfide fluorescent material includeLa₂O₂S: Eu, Y₂O₂S: Eu and Gd₂O₂S: Eu.

Examples of the rare earth aluminate fluorescent material, that ismainly activated with elements based on lanthanoid such as Ce, includefluorescent materials represented by the following composition formulasY₃Al₅O₁₂: Ce, (Y_(0.8)Gd_(0.2))₃Al₅O₁₂: Ce, Y₃(Al_(0.8)Ga_(0.2))₅O₁₂: Ceand (Y, Gd)₃(Al, Ga)₅O₁₂.

Examples of the oxynitride fluorescent material, that is mainlyactivated with elements based on lanthanoid such as Eu, includefluorescent materials represented by the following composition formulaMSi₂O₂N₂: Eu (M has at least one element of the group II elements suchas Ba, Ca, Sr and Mg).

Examples of the nitride fluorescent material, that is mainly activatedwith elements based on lanthanoid such as Eu, include fluorescentmaterials represented by the following composition formula M₂Si₅N₈: Eu(M has at least one element of the group II elements such as Ba, Ca, Srand Mg).

Method of Manufacturing the Semiconductor Device According to the FirstEmbodiment

The method of manufacturing semiconductor device 100 according to thefirst embodiment will now be described. A typical example of themanufacturing method is described where a plurality of semiconductorlight emitting elements 2 are mounted on a single plate-like pedestal 80that is not yet divided, before the coating film is formed, but thepresent invention is not limited to this constitution. FIG. 9 is aschematic plan view showing the semiconductor light emitting element 2disposed on the top face of the pedestal 80 that is not yet cut, beforethe coating film is formed. FIG. 11A through FIG. 11G are a sectionalview schematically showing a process of the film forming methodaccording to the present invention.

1. In this method, a back plate 7, the pedestal 80, the semiconductorlight emitting element 2 and the coating film 3 are placed one onanother in this order from the bottom between the first film 8 and thesecond film 9 that are to be laminated (first process, refer to FIG.11A). This process is carried out in the following procedure. Thecoating film 3 has the fluorescent material 6 mixed therein beforehand.

(1) A plurality of the semiconductor light emitting elements 2 aremounted face down at predetermined positions on the top face of thepedestal 80 in advance. There is no restriction on the method of thismounting process, and known mounting method can be employed. As shown inFIG. 9, the pedestal 1 that has been divided has hexagonal shape and hasthe semiconductor light emitting element 2 placed at the center of thepedestal 1. The figure shows the semiconductor light emitting element 2having rectangular shape placed so that two sides thereof are disposedparallel to two opposing parallel sides of the hexagonal shape of thepedestal 1. As described above, the pedestal 80 before the coating film3 is formed thereon has a plate shape with a plurality of semiconductorlight emitting elements 2 disposed thereon.

(2) Then the back plate 7 is provided on the bottom face of the pedestal80 having a plurality of semiconductor light emitting elements 2disposed thereon. The back plate 7 is provided in order to prevent thepedestal 80 from warping and braking during the lamination process. Theback plate 7 preferably has a size comparable to the size of thepedestal 80 or a little larger than the pedestal 80.

(3) Then the coating film 3 is placed on the pedestal 80 whereon thesemiconductor light emitting elements are disposed. The coating film 3preferably has a size comparable to the size of the pedestal 80.

This process is carried out in nitrogen atmosphere. This process ispreferably carried out in an inert gas atmosphere such as nitrogenatmosphere or argon atmosphere. It may also be carried out in vacuum.

The first film 8 and the second film 9 that are to be laminated may bemade of polypropylene, polyethylene or polyethylene terephthalate. Thefirst film 8 may be softer or thinner than the second film 9.

2. Then the first film 8 and the second film 9 are laminated in vacuumso as to bond with each other (second process, refer to FIG. 11B). Thisprocess is carried out in the following procedure.

(1) With the semiconductor device having the back plate 7, the pedestal80, the semiconductor light emitting element 2 and the coating film 3placed one on another thereon in this order being inserted between thefirst film 8 and the second film 9, the atmosphere is switched fromnitrogen to vacuum.

(2) The first film 8 and the second film 9 are bonded on the peripherythereof by thermal fusing or the like, but an evacuation hole is left sothat the space between the laminated films can be evacuated in the thirdprocess.

3. The coating film 3 is bonded on the top face and the side face of thesemiconductor light emitting element 2 and the top face of the pedestal1, while evacuating the space between the first film 8 and the secondfilm 9 in vacuum (third process, refer to FIG. 11BC).

By evacuating the space between the laminated films in vacuum, gapbetween the coating film 3 and the pedestal 1 is substantiallyeliminated. The gap between the semiconductor light emitting element 2and the pedestal 1 is evacuated vacuum. Thus the coating film 3 iscontacted closely on the top face and the side face of the semiconductorlight emitting element 2 and the top face of the pedestal 1.

In the third process, it is preferable to apply a pressure to the firstfilm 8 and the second film 9 from the outside, in order to improve theclose contact between the coating film 3 and the semiconductor lightemitting element 2 and the close contact between the pedestal 1 and thesemiconductor light emitting element 2. However, the pressure iscontrolled to a predetermined level because applying an excessively highpressure may cause the coating film 3 to rupture or the bumps thatconnect the semiconductor light emitting element 2 and the pedestal 1 tobreak. The pressure is preferably in a range from 5 to 50 kgf/cm². Theisotropic pressure pressing means is preferably used to apply thepressure to the first film 8 and the second film 9 from the outside. Asthe isotropic pressure pressing means, immersion of the laminated filmsin water or rubber may be employed.

In the third process, or after the third process, it is preferable toheat the space between the first film 8 and the second film 9. Closecontact between the coating film 3 and the semiconductor light emittingelement 2 and the close contact between the pedestal 1 and thesemiconductor light emitting element 2 can be improved by heating. It ispreferable to heat to such a temperature as the coating film 3 becomesadhesive or soften. The temperature is preferably such as the first film8 and the second film 9 can endure, and the coating film 3 showsadhesiveness, for example from 100 to 170° C.

4. Then the first film 8 and the second film 9 are removed from thesemiconductor device on which the coating film 3 has been fastened(fourth process, refer to FIG. 11D). After fastening the coating film 3onto the semiconductor light emitting element 2 and the pedestal 1, thefirst film 8 and the second film 9 are carefully removed so as not tobreak the coating film 3. Such a procedure may also be employed as thecoating film 3 is tentatively hardened in the third process, then thefirst film 8 and the second film 9 are removed in the fourth process andthe coating film 3 is fully hardened.

5. Then the coating film 3 is trimmed (fifth process, refer to FIG. 1E).After fastening the coating film 3 onto the semiconductor light emittingelement 2 and the pedestal 80, unnecessary portion is cut off with acutting tool 10 such as a sharp-edged cutter. Alternatively, a diehaving a predetermined shape is pressed against the pedestal 1 at apredetermined position, the unnecessary portion is sucked off.

6. Then the pedestal 80 is diced (sixth process, refer to FIG. 11F).After dicing, the semiconductor device is removed from the back plate 7.A dicing saw 11 is used to dice the semiconductor device into apredetermined shape. Dicing may be done by either cutting through thepedestal 80 from the top face to the bottom face using the dicing saw11, or partially cutting the pedestal 80 from the top face to a midpoint and then cleaving the pedestal 80 by applying a force.

The semiconductor device of the first embodiment can be manufactured inthe process described above (refer to FIG. 11G).

In an alternative manufacturing method, a bag may be used instead of thelaminated films. The bag has a predetermined size and shape that canaccommodate the back plate 7, the pedestal 80, the semiconductor lightemitting element 2 and the coating film 3, and may be made ofpolypropylene, polyethylene or polyethylene terephthalate. Use of thebag enables it to eliminate the process of laminating the films aroundthe pedestal 80.

Such an alternative manufacturing method may also be employed asfollows. For example, the pedestal 80 may be diced before the first film8 and the second film 9 are removed after the third process. Then thefirst film 8 and the second film 9 are removed from the coating film 3and the pedestal 1. The semiconductor device can be manufactured also inthis way. Then after the first film 8 and the second film 9 are removedfrom the coating film 3 and the pedestal 1, the coating film 3 may betrimmed.

In another alternative manufacturing method, the pedestal 80 with thesemiconductor light emitting element 2 mounted thereon that is cut inadvance may also be arranged on the top face of the back plate 7. Inthis case, the coating film 3 is trimmed after completing the firstthrough third processes. Then the first film 8 and the second film 9 areremoved from the coating film 3. This enables it to omit the operationof dicing the pedestal 1 after forming the coating film 3, therebypreventing the coating film 3 from being broken in the dicing process.

The semiconductor device of the first embodiment can be manufacturedalso in the process described above.

Embodiment 2

The semiconductor device according to second embodiment of the presentinvention will be described with reference to the accompanying drawings.FIG. 3A is a schematic perspective view showing a coating film 21 usedwhen making the semiconductor device according to the second embodiment.FIG. 3B is a schematic sectional view of the coating film 21 taken alonglines C-C′ in FIG. 3A. FIG. 3C is a schematic sectional view showing thesemiconductor device according to the second embodiment. This embodimentis similar to the first embodiment except for a different constitutionof the coating film 21 that covers the semiconductor light emittingelement 2. In the description of the second embodiment that follows,description on the shape of the semiconductor light emitting element 2and other features that are similar to those of the first embodimentwill be omitted.

In the second embodiment, the coating film 21 is made of a siliconeresin that does not include fluorescent material 6. The coating film 21is a thin film of a predetermined thickness without protrusions norrecesses before being fastened onto the semiconductor light emittingelement 2. The coating film 21 has such a size that covers the pedestal80 whereon the semiconductor light emitting element 2 is placed.

The coating film 21 covers the top face and side face of thesemiconductor light emitting element 2 and the top face of the pedestal1. After covering the semiconductor light emitting element 2 with thecoating film 21 on the pedestal 80, the coating film is trimmed so as toremove unnecessary portion of the coating film from the top face of thepedestal 1.

As a result, the interface between the semiconductor light emittingelement 2 and air is eliminated, so that light emitted by thesemiconductor light emitting element 2 is transmitted through thecoating film 21 that has a refractive index lower than that of thesemiconductor light emitting element 2, to the air having further lowerrefractive index. This further improves the efficiency of extractinglight from the semiconductor light emitting element 2.

Embodiment 3

The semiconductor device according to third embodiment of the presentinvention will be described with reference to the accompanying drawings.FIG. 4A is a schematic perspective view showing a coating film 22 usedwhen making the semiconductor device according to the third embodiment.FIG. 4B is a schematic sectional view of the coating film 22 taken alonglines D-D′ in FIG. 4A. FIG. 4C is a schematic sectional view showing thesemiconductor device according to the third embodiment. This embodimentis similar to the first embodiment except for a different shape of thecoating film 22 before being fastened onto the semiconductor lightemitting element 2. In the description of the third embodiment thatfollows, description on the shape of the semiconductor light emittingelement 2 and other features that are similar to those of the firstembodiment will be omitted.

In the third embodiment, one surface of the coating film 22 beforecovering the semiconductor light emitting element 2 has stripes ofprotrusions and recesses. The coating film 22 is made of silicone resin.The fluorescent material 6 is mixed uniformly in the silicone resin ofthe coating film 22. Since the coating film 22 is thicker in theportions of the stripes of protrusion thereof than in the portions ofthe stripes of recess, there exists a larger amount of the fluorescentmaterial 6 in the portions of the stripes of protrusion. The stripe ofprotrusion of the coating film 22 has a width substantially equal to thedistance of the top face of the semiconductor light emitting element 2.The stripe of recess of the coating film 22 has a width (distancebetween adjacent protrusions) that is equal to the sum of a distance(spacing) between adjacent semiconductor light emitting elements 2, thevertical length of the side face of one semiconductor light emittingelement 2 of the adjacent semiconductor light emitting elements 2, andthe vertical length of the side face of the other semiconductor lightemitting element 2 of the adjacent semiconductor light emitting elements2. Since the silicone resin shrinks in volume when heated to harden,however, widths of the protrusions and recesses may be set larger so asto compensate for the shrinkage. The fluorescent material may also beincluded in such a concentration distribution as the fluorescentmaterial 6 is included in the protrusion with higher concentration. Thecoating film 22 having the striped pattern of protrusions and recessescan be formed by pressing with a die having a predeterminedconfiguration. It may also be formed by extrusion forming, drawing,rolling or the like.

The other surface of the coating film 22 (bottom surface opposing thesemiconductor light emitting element 2 and the top face of the pedestal)is flat.

The coating film 22 having the constitution described above is placed sothat the stripes of protrusions of the coating film 22 are located ontop of the semiconductor light emitting element 2 that are disposed inan arrangement. That is, the stripes of protrusions of the coating film22 are formed so as to correspond to the respective rows of thearrangement of the semiconductor light emitting element 2. When thecoating film 22 is placed so that the protrusions are located on the topfaces of the semiconductor light emitting element 2, the recesses of thecoating film 22 are located on the side face of the semiconductor lightemitting element 2 and the top face of the pedestal 1. In thesemiconductor device manufactured in such a process as described above,larger amount of the fluorescent material exists on the top face of thesemiconductor light emitting element 2 that is covered by the protrusionof the coating film 22, and therefore greater amount of light ofwavelength transformed by the fluorescent material 6 is emitted. Throughthe side face of the semiconductor light emitting element 2 thatcorrespond to the recess of the coating film 22, in contrast, greateramount of light from the semiconductor light emitting element 2 isemitted. Thus such a semiconductor device can be provided that easilyemits blended light of the fluorescent material 6 and the semiconductorlight emitting element 2. Efficiency of extracting light can also beimproved. After covering the semiconductor light emitting element 2 withthe coating film 22, the coating film is trimmed so as to removeunnecessary portion of the coating film from the top face of thepedestal 1.

Embodiment 4

The semiconductor device according to fourth embodiment of the presentinvention will be described with reference to the accompanying drawings.FIG. 5A is a schematic perspective view showing a coating film 23 usedwhen making the semiconductor device according to the fourth embodiment.FIG. 5B is a schematic sectional view of the coating film 23 taken alonglines E-E′ in FIG. 5A. FIG. 5C is a schematic sectional view showing theconstitution of the semiconductor device according to the fourthembodiment. The fourth embodiment is similar to the first embodimentexcept for a different shape of the coating film 23 before beingfastened onto the semiconductor light emitting element 2. In thedescription that follows, description on the shape of the semiconductorlight emitting element 2 and other features that are similar to those ofthe first embodiment will be omitted.

The coating film 23 has stripes of protrusions and recesses on onesurface thereof. The coating film 23 is made of silicone resin. Thefluorescent material 6 is mixed uniformly in the silicone resin of thecoating film 23. Since the coating film 23 is thicker in the portions ofthe stripes of protrusion thereof than in the portions of the stripes ofrecess, there exists a larger amount of the fluorescent material 6 inthe portions of the stripes of protrusion. The coating film 23 has twotypes of protrusions of different widths formed alternately on onesurface thereof. The stripe of protrusion of one of the two types (firstprotrusion) has a width equal to the distance of the top face of thesemiconductor light emitting element 2. The stripe of protrusion of theother type (second protrusion) has a width that is equal to the distancebetween adjacent semiconductor light emitting elements 2. Since thesilicone resin shrinks in volume when heated to harden, however, widthsof the protrusions and recesses may be set larger so as to compensatefor the shrinkage. The coating film 23 having the striped pattern ofprotrusions and recesses can be formed by pressing with a die having apredetermined configuration. It may also be formed by extrusion forming,drawing or the like.

The bottom surface (the other surface) of the coating film 23 is flat.

The coating film 23 having the constitution described above is placed sothat the first protrusion of one of the stripes the coating film 23 islocated on top face of the semiconductor light emitting element 2 thatare disposed in an arrangement. Recess is located on the edge of the topface and the side face of the semiconductor light emitting element 2,and the second protrusion of the other stripe of the coating film 22 islocated on the side face of the semiconductor light emitting element 2and the top face of the pedestal 80. Since larger amount of thefluorescent material exists on the top face of the semiconductor lightemitting element 2 that is covered by the first protrusion of thecoating film 22, greater amount of light from the fluorescent material 6is emitted. Through the side face of the semiconductor light emittingelement 2 that correspond to the second protrusion of the coating film22, in contrast, greater amount of light from the semiconductor lightemitting element 2 is emitted. Thus such a semiconductor device can beprovided that readily emits blended light of the fluorescent material 6and the semiconductor light emitting element 2. Efficiency of extractinglight can also be improved. After covering the semiconductor lightemitting element 2 with the coating film 22, the coating film is trimmedso as to remove unnecessary portion of the coating film from the topface of the pedestal 1.

Embodiment 5

The semiconductor device according to fifth embodiment of the presentinvention will be described with reference to the accompanying drawings.FIG. 6A is a schematic perspective view showing a coating film used whenmaking the semiconductor device according to the fifth embodiment. FIG.6B is a schematic sectional view of the coating film taken along linesF-F′ in FIG. 6A. FIG. 6C is a schematic sectional view showing thesemiconductor device according to the fifth embodiment. The fifthembodiment is similar to the first embodiment except for a differentshape of the coating film 24 before being fastened onto thesemiconductor light emitting element 2. In the description that follows,description on the shape of the semiconductor light emitting element 2and other features that are similar to those of the first embodimentwill be omitted.

In the fifth embodiment, the coating film 24 has protrusions formed onone surface thereof so as to correspond to the semiconductor lightemitting element 2. The coating film 24 is made of denatured siliconeresin. The fluorescent material 6 and a dispersant are mixed uniformlyin the denatured silicone resin of the coating film 24. Since thecoating film 24 is thicker in the portions of the protrusion thereofthan in the portions of the recess, there exists a larger amount of thefluorescent material 6 and the dispersant in the portions of theprotrusion. The protrusion of the coating film 24 has a sizecorresponding to the top face and the side face of the semiconductorlight emitting element 2. The protrusion of the coating film 24 islocated at a position that corresponds to the portion where thesemiconductor light emitting element 2 is disposed. Since the denaturedsilicone resin shrinks in volume when heated to harden, however, theprotrusions of the coating film 24 may be formed a little wider. Wasteof the fluorescent material 6 caused by trimming can be reduced bycontaining larger amount of the fluorescent material 6 in the protrusionof the coating film 24 and containing smaller amount of the fluorescentmaterial 6 in the recess of the coating film 24. Protrusions andrecesses of the coating film 24 can be formed by pressing with a diehaving a predetermined configuration. It may also be formed by extrusionforming, drawing or the like.

The bottom surface (the other surface) of the coating film 24 is flat.

The coating film 24 is placed so that the protrusion of the coating film24 is located on top face and the side face of the semiconductor lightemitting element 2 and the recess of the coating film 24 is located onthe top face of the pedestal 80. In the semiconductor device of thefifth embodiment made as described above, since larger amount of thefluorescent material 6 exists on the top face and the side face of thesemiconductor light emitting element 2 corresponding to the protrusionof the coating film 24, greater amount of light from the fluorescentmaterial 6 is emitted. Since thickness of the coating film 24 issubstantially equal on the top face and the side face of thesemiconductor light emitting element 2, the semiconductor device havingless color unevenness can be provided.

The coating film 24 may be a thin film without protrusions nor recesses,with a larger amount of the fluorescent material 6 included in theportions that corresponding to the shape of the semiconductor lightemitting element 2. This makes it possible to manufacture the coatingfilm 24 more easily.

Embodiment 6

The semiconductor device according to sixth embodiment of the presentinvention will be described with reference to the accompanying drawings.FIG. 7A is a schematic perspective view showing the constitution of acoating film used when making the semiconductor device according to thesixth embodiment. FIG. 7B is a schematic sectional view of the coatingfilm. FIG. 7C is a schematic sectional view showing the constitution ofthe semiconductor device according to the sixth embodiment. The sixthembodiment is similar to the first embodiment except for a differentshape of the coating film 25 before being fastened onto thesemiconductor light emitting element 2. In the description that follows,description on the shape of the semiconductor light emitting element 2and other features that are similar to those of the first embodimentwill be omitted.

In the sixth embodiment, the coating film 25 is a flat sheet. Thecoating film 25 has a through hole at a position that corresponds to theelectrodes 4 exposed on the top face of the pedestal 80. The throughhole is formed so as to allow the electrodes 4 to be exposed inpredetermined size. The coating film 25 is made of denatured siliconeresin. The fluorescent material 6 is mixed uniformly in the denaturedsilicone resin of the coating film 25.

The top face and the side face of the semiconductor light emittingelement 2 constituted as described above and the top face of thepedestal 80 are covered by the coating film 25. The coating film 25 isaligned so that the through holes are located so as to correspond to theexposed portion of the electrode 4. In the sixth embodiment, the coatingfilm 25 may be trimmed in conformity with the shape of the pedestal 1.

Embodiment 7

The semiconductor device according to seventh embodiment of the presentinvention will be described with reference to the accompanying drawings.FIG. 8A is a schematic perspective view showing the constitution of acoating film used when making the semiconductor device according to theseventh embodiment. FIG. 8B is a schematic sectional view showing thecoating film. FIG. 8C is a schematic sectional view showing thesemiconductor device according to the seventh embodiment. The seventhembodiment is similar to the first embodiment except for a differentshape of the coating film 26 before being fastened onto thesemiconductor light emitting element 2. In the description that follows,description on the shape of the semiconductor light emitting element 2and other features that are similar to those of the first embodimentwill be omitted.

The coating film 26 is a flat sheet. The coating film 26 contains thefluorescent material 6 in higher concentration in the portion thereofthat corresponds to the semiconductor light emitting element 2. Acutting line is formed in the coating film 26 at a predeterminedposition corresponding to the semiconductor light emitting element 2.After fastening the coating film 26 onto the semiconductor lightemitting element 2, the coating film 26 is removed except for theportion that is fastened onto the semiconductor light emitting element2. At this time, the portion of the coating film 26 to be removed isseparated from the rest along the cut made beforehand. This eliminatesthe need of the trimming operation, thus making it possible tomanufacture the semiconductor device easily. The coating film 26 is madeof silicone resin. In the seventh embodiment, the fluorescent material 6and a dispersant are mixed uniformly in the silicone resin of thecoating film 26. It is preferable to apply heat and pressure to thecoating film 26 at the portion thereof corresponding to thesemiconductor light emitting element 2, so as to prevent thesemiconductor light emitting element 2 and the coating film 26 fromcoming apart from each other. Waste of the fluorescent material 6 causedwhen removing the coating film 26 can be reduced by containing largeramount of the fluorescent material 6 in the portion of the coating film24 corresponding to the semiconductor light emitting element 2 andcontaining smaller amount of the fluorescent material 6 in the otherportion of the coating film 26. The cut line in the coating film 26 canbe formed by partial cutting by means of a curter or punching with adie.

The coating film 26 having the constitution described above is placed onthe top face and the side face of the semiconductor light emittingelement 2 and on the top face of the pedestal 1. In the semiconductordevice constituted as described above, the coating film 26 covering fromthe top face and the side face of the semiconductor light emittingelement 2 to the top face of the pedestal 1 has substantially uniformthickness.

The semiconductor device of the second through seventh embodiments canbe manufactured by the method described in the first embodiment.

Variation of the Manufacturing Method

In the manufacturing method according to the first embodiment, thepedestal 80 is cut into the individual pedestals 1 after forming thecoating film 3 on the top face of the semiconductor light emittingelement 2 and the other portions and trimming the coating film 3 foreach semiconductor light emitting element 2. According to the presentinvention, however, the coating film 3 may be trimmed for eachsemiconductor light emitting element 2 after forming the coating film 3on the top face of the semiconductor light emitting element 2 and theother portions and cutting the pedestal 80 into hexagonal pieces.

Also according to the present invention, however, the coating film 3 mayalso be trimmed after disposing the pedestals 1 that have been cut offin advance on the back plate and forming the coating film 3 on thepedestals.

FIG. 10 is a schematic plan view showing the pedestals 1 having thesemiconductor light emitting element placed on the top faces thereofbeing arranged on the back plate (not shown) before the process offorming the coating film.

In this case, the semiconductor devices 2 are mounted face down on thepedestals 1 with the electrode 4 having the predetermined electricallyconductive pattern formed thereon. The pedestal 1 has hexagonal shape,and the semiconductor light emitting element 2 is placed at the centerof the pedestal 1. The semiconductor light emitting element 2 havingrectangular shape is placed so that two sides thereof are disposedparallel to two opposing parallel sides of the hexagonal shape of thepedestal 1. The pedestal 1 is cut into hexagonal shape in advance, andis placed on the back plate (not shown).

Then the coating film 3 is formed on the top face of the semiconductorlight emitting element 2 mounted on the pedestal 1. After trimming thecoating film 3 for the individual semiconductor light emitting elements2, the pedestals 1 are removed from the back plate.

Unnecessary portion of the coating film 3 to be removed by trimming canbe reduced thereby to utilize the coating film 3 effectively by firstdisposing a plurality of pedestals 1 whereon the semiconductor lightemitting elements 2 have been mounted, then forming the coating film 3and trimming it. It also enables it to prevent the coating film 3 frombeing broken as the pedestal 1 is cut off.

Embodiment 8

The semiconductor device provided with the coating member employing thesemiconductor device obtained in the first to seventh embodiment will bedescribed below as eighth embodiment. FIG. 12A is a schematic plan viewshowing the semiconductor device according to the eighth embodiment ofthe present invention. FIG. 12B is a schematic sectional view showingthe semiconductor device according to the eighth embodiment. Descriptionthat follows deals with a case of the semiconductor device 100 of thefirst embodiment, although the invention is not limited to thisconstitution.

After forming the semiconductor device 100, the coating film 3 iscovered on the outside thereof by a coating member 12 having apredetermined shape. The coating member 12 is preferably made of atranslucent material, in order to extract light emitted by thefluorescent material 6 and light emitted by the semiconductor lightemitting element 2 to the outside. The coating member 12 preferably hasa lens shape, in order to improve the light collecting power and thedirectivity. The coating member 12 may include one of fluorescentmaterial, pigment and dispersant. The coating member 12 is preferablyharder than the coating film 3, in order to protect the coating film 3.The coating member 12 may be made of epoxy resin composition, siliconeresin composition, acrylic resin composition or the like.

The coating member 12 is formed with a predetermined mold and is thenapplied to the semiconductor device 100. The coating member 12 isapplied by immersing the semiconductor device 100 with the coating film3 facing downward in a predetermined mold filled with a liquid siliconeresin or epoxy resin, and hardening the coating member 12. Afterhardening, the semiconductor device is taken out and the semiconductordevice provided with the coating member is complete.

Embodiment 9

The semiconductor device provided with the coating member having aconstitution different from that of the eighth embodiment employing thesemiconductor device obtained in the first to seventh embodiment will bedescribed below as ninth embodiment. FIG. 13 is a schematic sectionalview showing a semiconductor light emitting element having thesemiconductor device according to the present invention. Descriptionthat follows deals with a case of the semiconductor device 100 of thefirst embodiment, although the invention is not limited to thisconstitution.

After making the semiconductor device 100, it is mounted in a package 16having the predetermined shape. The package 16 has an opening wider thanbottom. The semiconductor device 100 is placed on the bottom. Thesemiconductor device 100 is bonded onto the bottom of the package 16 byusing a die bond resin. The positive and negative electrodes 4 of thesemiconductor device 100 are electrically connected to externalelectrodes of the package 16 via wires. An under coat 13 is put into thepackage 16 that has an opening, and a middle coat 14 is put thereon. Theunder coat 13 covers the semiconductor device 100 and the wires. A lens15 is formed on the middle coat 14. The under coat 13, the middle coat14 and the lens 15 are referred to as the coating member in thisspecification. The refractive indexes of the under coat 13, the middlecoat 14 and the lens 15 become smaller in order of mention, so as toimprove the efficiency of extracting light from the semiconductor device100. The under coat 13 and the middle coat 14 may be formed fromsilicone resin or the like. The lens 15 may be made of epoxy resin, aninorganic glass or plastic glass.

EXAMPLES

The semiconductor device 100 is made as shown in FIG. 1. In thisexample, the semiconductor light emitting element 2 is such that ismounted on the pedestal 80 face down as shown in FIG. 9.

The semiconductor light emitting element 2 employs InGaN semiconductorthat has peak wavelength of emission near 460 nm. The semiconductorlight emitting element 2 emits blue light. The semiconductor lightemitting element 2 measures 1 mm square. The semiconductor lightemitting element 2 is mounted face down on the top face of the pedestal1. The pedestal 1 is made of glass epoxy resin having positive andnegative electrodes 4 of predetermined electrical conductivity patterndisposed thereon. The electrodes 4 are made of Ag. Part of the positiveand negative electrodes 4 are exposed so as to be electrically connectedwith the semiconductor light emitting element 2 and other part thereofare exposed so as to be electrically connected with external electrodes.The pedestal 1 has a hexagonal shape with one side thereof measuringabout 1 mm.

The coating film 3 is formed on the top face and side face of thesemiconductor light emitting element 2 that is mounted face down and onthe top face of the pedestal 1. The coating film 3 contains thefluorescent material 6 mixed therein. The fluorescent material 6 is madeby coprecipitating a solution of rare earth element such as Y, Gd Ce inan acid in stoichiometrical proportion with oxalic acid. An oxide madeby burning the coprecipitate and aluminum oxide are mixed so as toobtain the stock material. The stock material and ammonium fluoride usedas a flux are mixed and put into a crucible that is heated to 1400° C.in air for 3 hours. The fired material is crushed by a ball mil inwater, then washed, separated and dried, so as to obtain (Y,Gd)₃Al₅O₁₂:Ce. The fluorescent material 6 and the coating film 3 aremixed uniformly in weight proportion of about 1:1. The coating film 3 ismade of silicone resin (for example, KJR-9032 manufactured by Shin-EtsuChemical Co., Ltd.). The coating film 3 is formed by rolling between atleast two rotary drums. The rolling operation is repeated several timesso as to form the coating film 3 of a predetermined thickness. Therolling operation is preferably carried out by repeating hot rolling andcold rolling. In this example, the coating film 3 having uniformthickness of about 75 μm is formed.

The back plate 7 is provided on the back of the pedestal 1 whereon theplurality of semiconductor light emitting elements 2 are mounted. Theback plate 7 is made of ceramics. The pedestal 1 has through hole atpredetermined position. The back plate 7 has protrusion at a positionthat corresponds to the through hole. The back plate 7 and the pedestal1 are bonded together with an adhesive, so as to prevent the back plate7 and the pedestal 1 from being displaced from each other.

The coating film 3 is stuck onto the top face and side face of thesemiconductor light emitting element 2 and the top face of the pedestal1. Then the back plate 7 is placed on the second film 9, and the firstfilm 8 is placed gently on the top face of the coating film 3. Then thefirst film 8 and second film 9 are sealed by laminating except for apart of the periphery.

The semiconductor device covered by the laminated films is put into apredetermined container, the container is evacuated to vacuum. The spacebetween the laminated films is also evacuated to purge air. Afterevacuating to make the inside vacuum, the part of the periphery of thelaminated films that has been left open is sealed.

The laminated film is immersed in rubber that is kept at a temperatureof about 120° C. After being immersed for about 1 minute, the laminatedfilm is taken out and the first film 8 and second film 9 are removedgently so that the coating film 3 does not come off.

Then the coating film is trimmed along the periphery of thesemiconductor light emitting element 2 with a cutting tool 10 such as asharp edge. The coating film 3 is trimmed into a square of about 1.3 mmby cutting the coating film 3 between the adjacent semiconductor lightemitting elements 2 with a width of about 1.5 mm. This enables it toform the coating film 3 having uniform thickness of about 75 μm on thetop face and side face of the semiconductor light emitting element 2 andthe top face of the pedestal 1. The external surface of the coating filmlocated on the edge that is the intersect between the top face and theside face of the semiconductor light emitting element 2 has a roundedshape, and the external surface of the coating film located on the edgethat is the intersect between the side face of the semiconductor lightemitting element 2 and the top face of the pedestal 1 has a roundedshape.

Then the pedestal 1 is cut into hexagonal shape with the dicing saw 11.Cutting is done by dicing to a depth of about one third of thethickness, and then applying a force to break along the cut. Thepedestal 1 is removed from the back plate 7 during or after cutting.

Through the process described above, the semiconductor device 100 ismanufactured.

When current is supplied to the semiconductor device 100, blue lightemitted by the semiconductor light emitting element 2 and yellow lightemitted by the fluorescent material 6 are blended, so that thesemiconductor device 100 emits light in white region. The semiconductordevice 100 has very good directivity.

The semiconductor device that employs the semiconductor light emittingelement according to the present invention can be used in suchapplications as lighting instruments, back light for cell phone or thelike, traffic signal, and automobile lighting apparatus. It can also beused for semiconductor device that employs semiconductor element such asIC and LSI.

1. A semiconductor device comprising a semiconductor element, a pedestalon which said semiconductor element is placed, and a coating film thatcovers at least a part of top face and side face of said semiconductorelement and top face of said pedestal, wherein at least two of a firstthickness that is the thickness of said coating film in a portionthereof covering the top face of said semiconductor element, a secondthickness that is the thickness of said coating film in a portionthereof covering the side face of said semiconductor element and a thirdthickness that is the thickness of said coating film in a portionthereof covering the top face of said pedestal are substantially equalto each other, and the external surface of said coating film that coversthe edge between top face and the side face of said semiconductorelement has a rounded shape, and the external surface of said coatingfilm that covers the boundary between the side face of saidsemiconductor element and the top face of said pedestal has a roundedshape.
 2. The semiconductor device according to claim 1, wherein radiusof curvature of the external surface of the rounded coating film thatcovers said edge is not smaller than (½)N and not larger than 3M, whereM is larger one of the first thickness and the second thickness and N isthe smaller one.
 3. The semiconductor device according to claim 1,wherein radius of curvature of the external surface of the roundedcoating film that covers said boundary is not smaller than (½)T and notlarger than 3S, where S is larger one of said second thickness and saidthird thickness and T is smaller one thereof.
 4. The semiconductordevice according to claim 1, wherein the difference between the maximumvalue and the minimum value of thickness of the coating film that coversthe top face of said semiconductor element is within {fraction (1/10)}of the arithmetic mean of the thicknesses of said coating film thatcovers the top face of said semiconductor element, while said firstthickness is said arithmetic mean.
 5. The semiconductor device accordingto claim 1, wherein the difference between the maximum value and theminimum value of thickness of said coating film that covers the sideface of said semiconductor element is within {fraction (1/10)} of thearithmetic mean of the thicknesses of said coating film that covers theside face of said semiconductor element, while said second thickness issaid arithmetic mean.
 6. The semiconductor device according to claim 1,wherein the difference between the maximum value and the minimum valueof thickness of said coating film that covers the top face of saidpedestal is within {fraction (1/10)} of the arithmetic mean of thethicknesses of said coating film that covers the top face of saidpedestal, while said third thickness is said arithmetic mean.
 7. Thesemiconductor device according to claim 1, wherein the contact areabetween said pedestal and said coating film is larger than the crosssectional area of said coating film at the middle of the side face saidsemiconductor element.
 8. The semiconductor device according to claim 1,wherein said semiconductor element is a semiconductor light emittingelement.
 9. The semiconductor device according to claim 1, wherein saidcoating film contains a fluorescent material, a pigment or a dispersant.10. The semiconductor device according to claim 1, wherein said coatingfilm consists of two or more films laminated together.
 11. Thesemiconductor device according to claim 1, wherein the external surfaceof said coating film that covers the top face of said semiconductorelement has protrusions and recesses.
 12. The semiconductor deviceaccording to claim 1, wherein the interface between the top face of saidsemiconductor element and said coating film is smooth.
 13. Thesemiconductor device according to claim 1, wherein said coating film isa soft film.
 14. The semiconductor device according to claim 1, whereinsaid coating film is made of a silicone resin composition.
 15. Thesemiconductor device according to claim 1, wherein said coating film hasadhesiveness.
 16. The semiconductor device according to claim 1, whereinsaid semiconductor device is provided with a coating member that coversat least a part of the external surface of said coating film.
 17. Thesemiconductor device according to claim 16, wherein said coating memberis capable of transmitting light.
 18. The semiconductor device accordingto claim 16, wherein said coating member is formed in semi-spherical orlens shape.
 19. The semiconductor device according to claim 16, whereinsaid coating member contains a fluorescent material, a pigment or adispersant.
 20. The semiconductor device according to claim 16, whereinsaid coating member is a silicone resin composition or an epoxy resincomposition.
 21. A method for manufacturing a semiconductor device thatincludes a pedestal and a semiconductor element placed on said pedestal,with at least a part of top face and side face of said semiconductorelement and top face of said pedestal being covered by a coating film,said method comprising: a first process of successively placing at leastsaid pedestal, said semiconductor element and said coating film one onanother; a second process of putting said pedestal, said semiconductorelement and said coating film placed one on another in said firstprocess into a bag; and a third process of reducing a pressure withinsaid bag so that the coating film is fastened onto at least a part ofthe top face and the side face of said semiconductor element and the topface of said pedestal.
 22. A method for manufacturing a semiconductordevice that includes a pedestal and a semiconductor element placed onsaid pedestal, with at least a part of top face and side face of saidsemiconductor element and top face of said pedestal being covered by acoating film, said method comprising: a first process of successivelyplacing at least said pedestal, said semiconductor element and saidcoating film one on another between a first film and a second film thatare used in lamination process; a second process of laminating the firstfilm and the second film on at least part thereof and bonded together invacuum; and a third process of reducing a pressure in the space betweenthe first film and the second film in vacuum so that the coating film isfastened onto at least a part of the top face and the side face of saidsemiconductor element and the top face of said pedestal.
 23. The methodof manufacturing the semiconductor device according to claim 21, whereina back plate is provided on a surface of the pedestal opposite to thesurface thereof on which said semiconductor element is placed in saidfirst process.
 24. The method of manufacturing the semiconductor deviceaccording to claim 21, wherein said coating film in the first processcontains a fluorescent material, a pigment or a dispersant.
 25. Themethod of manufacturing the semiconductor device according to claim 21,wherein said coating film is made by using a silicone resin compositionin the first process.
 26. The method of manufacturing the semiconductordevice according to claim 21, wherein said coating film has adhesivenessin the first process.
 27. The method of manufacturing the semiconductordevice according to claim 21, wherein said coating film consists of oneor more film in the first process.
 28. The method of manufacturing thesemiconductor device according to claim 21, wherein a pressure isapplied to said bag from the outside in the third process.
 29. Themethod of manufacturing the semiconductor device according to claim 21,wherein a pressure is applied to said bag from the outside and isotropicpressure pressing means is used as the means for applying the pressureto said bag from the outside in the third process.
 30. The method ofmanufacturing the semiconductor device according to claim 21, whereininside of said bag is heated in the third process or after the thirdprocess.
 31. The method of manufacturing the semiconductor deviceaccording to claim 22, wherein a pressure is applied to said first filmand said second film from the outside in the third process.
 32. Themethod of manufacturing the semiconductor device according to claim 22,wherein a pressure is applied to said first film and said second filmfrom the outside, and isotropic pressure pressing means is used as themeans for applying said pressure in the third process.
 33. The method ofmanufacturing the semiconductor device according to claim 22, whereinthe space between said first film and said second film is heated in thethird process or after the third process.
 34. The method ofmanufacturing the semiconductor device according to claim 22 that, aftersaid third process, includes: a process of removing the first film; aprocess of covering the top face of the semiconductor element that iscovered by the coating film with a coating film of the same or differentkind, between the third film and the second film or a fourth film whichare used in lamination process; a process of laminating the third filmand the second film or the fourth film on at least part thereof andbonded together in vacuum; and a process of reducing the pressure in thespace between the third film and the second film or the fourth film invacuum so that the top face of the semiconductor element that is coveredby the coating film is bonded with a coating film of the same ordifferent kind.
 36. The method of manufacturing the semiconductor deviceaccording to claim 22, wherein a back plate is provided on a surface ofthe pedestal opposite to the surface thereof on which said semiconductorelement is placed in said first process.
 37. The method of manufacturingthe semiconductor device according to claim 22, wherein said coatingfilm in the first process contains a fluorescent material, a pigment ora dispersant.
 38. The method of manufacturing the semiconductor deviceaccording to claim 22, wherein said coating film is made by using asilicone resin composition in the first process.
 39. The method ofmanufacturing the semiconductor device according to claim 22, whereinsaid coating film has adhesiveness in the first process.
 40. The methodof manufacturing the semiconductor device according to claim 22, whereinsaid coating film consists of one or more film in the first process.